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參數(shù)資料
| 型號： | HGTG20N50C1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 36 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 26 A, 500 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 33K |
| 代理商： | HGTG20N50C1D |
3-74
HGTG20N50C1D
FIGURE 9. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 10. TYPICAL FALL TIME (I
C
= 10A)
FIGURE 11. TYPICAL FALL TIME (I
C
= 20A)
FIGURE 12. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
FIGURE 14. TYPICAL t
RR
, t
A
, t
B
vs FORWARD CURRENT
Typical Performance Curves
(Continued)
V
GE
V
CE
W
OFF
=
∫
I
C
*
V
CE
dt
I
C
800
700
600
500
400
300
200
100
0
t
F
,
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
I
C
= 10A, V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
μ
H, R
G
= 25
800
700
600
500
400
300
200
100
0
t
F
,
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
C
= 20A, V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
μ
H, R
G
= 25
800
700
600
500
400
300
200
100
0
W
O
,
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
μ
H, R
G
= 25
900
1000
GATE
EMITTER
VOLTAGE
V
CC
= BV
CES
500
375
250
125
0
10
8
6
4
2
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
V
C
,
V
G
,
NOTE: For Turn-Off gate currents in excess of 3mA. V
Turn-Off
is not accurately represented by this normalization.
R
= 25
I
G
(REF) = 0.76mA
V
GE
= 10V
COLLECTOR-EMITTER VOLTAGE
V
CC
= 0.25 BV
CES
80
70
60
50
40
30
20
10
0
t
1
10
100
I
EC
, EMITTER-COLLECTOR CURRENT (A)
t
RR
t
A
t
B
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