參數(shù)資料
型號: HGTG12N60A4
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N溝道絕緣柵雙極型晶體管)
中文描述: 54 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù): 8/10頁
文件大小: 115K
代理商: HGTG12N60A4
8
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
TO-263AB
24mm TAPE AND REEL
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
E
A
1
A
H
1
D
L
b
e
e1
L
2
b
1
L
1
c
TERM. 4
1
3
1
3
L
3
b
2
TERM. 4
0.450
(11.43)
0.350
(8.89)
0.150
(3.81)
0.080 TYP (2.03)
0.062 TYP (1.58)
0.700
(17.78)
J
1
SYMBOL
A
A
1
b
b
1
b
2
c
D
E
e
e
1
H
1
J
1
L
L
1
L
2
L
3
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-263AB outline dated 2-92.
2. L
3
and b
2
dimensions established a minimum mounting surface
for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L
1
is the terminal length for soldering.
7. Positionofleadtobemeasured0.120inches(3.05mm)frombottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 11 dated 5-99.
INCHES
MIN
0.170
0.048
0.030
0.045
0.310
0.018
0.405
0.395
0.100 TYP
0.200 BSC
0.045
0.095
0.175
0.090
0.050
0.315
MILLIMETERS
MIN
4.32
1.22
0.77
1.15
7.88
0.46
10.29
10.04
2.54 TYP
5.08 BSC
1.15
2.42
4.45
2.29
1.27
8.01
NOTES
-
4, 5
4, 5
4, 5
2
4, 5
-
-
7
7
-
-
-
4, 6
3
2
MAX
0.180
0.052
0.034
0.055
-
0.022
0.425
0.405
MAX
4.57
1.32
0.86
1.39
-
0.55
10.79
10.28
0.055
0.105
0.195
0.110
0.070
-
1.39
2.66
4.95
2.79
1.77
-
2.0mm
4.0mm
1.75mm
1.5mm
DIA. HOLE
C
USER DIRECTION OF FEED
16mm
24mm
330mm
100mm
13mm
30.4mm
24.4mm
COVER TAPE
GENERAL INFORMATION
1. 800 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
ACCESS HOLE
40mm MIN.
相關PDF資料
PDF描述
HGT1S12N60B3DS 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管)
HGTG12N60B3D 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管)
HGT1S12N60B3S 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
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HGT1S12N60C3S9A TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
相關代理商/技術參數(shù)
參數(shù)描述
HGTG12N60A4D 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG12N60A4D 制造商:Intersil Corporation 功能描述:IGBT TO-247
HGTG12N60A4S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-247AA
HGTG12N60B3 功能描述:IGBT 晶體管 12A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG12N60B3D 制造商:Harris Corporation 功能描述: