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參數(shù)資料
| 型號(hào)： | HGTG12N60A4 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 115K |
| 代理商： | HGTG12N60A4 |
10
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
TO-220AB
(Alternate Version)
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
E
P
D
L
L
1
60
o
b
1
b
e
e
1
H
1
1
J
1
2
3
TERM. 4
Q
c
A
1
A
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.170
0.180
4.32
4.57
-
A
1
b
0.048
0.052
1.22
1.32
2, 4
0.030
0.034
0.77
0.86
2, 4
b
1
c
0.045
0.055
1.15
1.39
2, 4
0.018
0.022
0.46
0.55
2, 4
D
0.590
0.610
14.99
15.49
-
E
0.395
0.405
10.04
10.28
-
e
0.100 TYP
2.54 TYP
5
e
1
H
1
J
1
L
0.200 BSC
5.08 BSC
5
0.235
0.255
5.97
6.47
-
0.095
0.105
2.42
2.66
6
0.530
0.550
13.47
13.97
-
L
1
P
0.110
0.130
2.80
3.30
3
0.149
0.153
3.79
3.88
-
Q
0.105
0.115
2.66
2.92
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Dimension (without solder).
3. Solder finish uncontrolled in this area.
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from
bottom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from
bottom of dimension D.
7. Controlling dimension: Inch.
8. Revision 3 dated 7-97.
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| HGT1S12N60B3DS | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管) |
| HGTG12N60B3D | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60B3S | 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG12N60A4D | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG12N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG12N60A4S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-247AA |
| HGTG12N60B3 | 功能描述:IGBT 晶體管 12A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG12N60B3D | 制造商:Harris Corporation 功能描述: |
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