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參數(shù)資料
| 型號(hào)： | HGTG10N120BND |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 35 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 217K |
| 代理商： | HGTG10N120BND |
2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 150
o
C, R
G
= 10
, L = 2mH, V
CE
= 960V
f
M
,
2
1
10
20
10
50
5
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.42
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
T
C
75
o
C
75
o
C 12V
V
GE
15V
110
o
C 12V
110
o
C
15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
12
13
14
15
16
5
10
15
20
50
100
150
250
t
SC
I
SC
25
200
V
CE
= 840V, R
G
= 10
, T
J
= 125
o
C
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
30
6
8
10
40
50
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 12V
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
20
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
30
40
0
2
4
6
8
10
10
50
0
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
E
O
,
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
3
2
5
0
5
10
0
15
20
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 10
, L = 2mH, V
CE
= 960V
1
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
5
0
1.0
0.5
2.0
10
R
G
= 10
, L = 2mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
15
20
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
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| HGTP12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG10N120BND | 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE IGBT 1.2KV 35A |
| HGTG10N120BND_Q | 功能描述:IGBT 晶體管 35A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG10N120ND | 制造商:Rochester Electronics LLC 功能描述: |
| HGTG11N120CN | 功能描述:IGBT 晶體管 43A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG11N120CND | 功能描述:IGBT 晶體管 43A 1200V NCh w/Anti Parallel Hyprfst Dde RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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