- 您現在的位置：買賣IC網 > PDF目錄384405 > HGT1S2N120BNDS (HARRIS SEMICONDUCTOR) 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管) PDF資料下載
參數資料
| 型號： | HGT1S2N120BNDS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 2 A, 1200 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數： | 5/7頁 |
| 文件大?。?/td> | 87K |
| 代理商： | HGT1S2N120BNDS |
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
0
15
20
25
35
40
1
45
4
5
3
R
G
= 51
, L = 5mH, V
CE
= 960V
30
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
10
20
15
4
0
3
1
5
30
40
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
5
25
35
2
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
0
300
1
150
250
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
4
450
350
400
5
3
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
200
2
100
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
R
G
= 51
, L = 5mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
0
50
200
250
1
150
300
400
5
4
3
2
100
350
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
I
C
,
0
15
13
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
20
25
14
15
30
T
C
= 150
o
C
T
C
= -55
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 20V
10
T
C
= 25
o
C
7
5
V
G
,
Q
G
, GATE CHARGE (nC)
5
20
0
0
20
5
25
V
CE
= 800V
I
G (REF)
= 1mA, R
L
= 260
, T
C
= 25
o
C
V
CE
= 1200V
10
15
35
V
CE
= 400V
30
10
15
HGTP2N120BND, HGT1S2N120BNDS
相關PDF資料 |
PDF描述 |
|---|---|
| HGT1S2N120CN | 13A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120BNS | XC9536-7PC44I - NOT RECOMMENDED for NEW DESIGN |
| HGT1S2N120CNS | XC9536-7VQ44C - NOT RECOMMENDED for NEW DESIGN |
| HGTP2N120BN | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| HGTP2N120BND | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HGT1S2N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB |
| HGT1S2N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S2N120CN | 功能描述:IGBT 晶體管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S2N120CNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
發(fā)布緊急采購，3分鐘左右您將得到回復。