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參數(shù)資料
| 型號： | HGT1S2N120BNDS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 2 A, 1200 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 87K |
| 代理商： | HGT1S2N120BNDS |
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 150
o
C, R
G
= 51
, L = 5mH, V
CE
= 960V
f
M
,
0.5
10
5.0
2.0
50
1.0
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
JC
= 1.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
T
C
110
o
C
110
o
C
V
GE
15V
12V
T
C
75
o
C
75
o
C
V
GE
15V
12V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
12
13
14
15
5
10
15
20
20
25
30
40
t
SC
I
SC
25
35
V
CE
= 840V, R
G
= 51
, T
J
= 125
o
C
0
1
3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
6
5
6
7
8
10
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
4
2
4
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
4
6
8
0
1
2
3
4
7
2
10
0
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
5
6
E
O
,
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1.0
1
0
2.0
2
0
4
5
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 51
, L = 5mH, V
CE
= 960V
0.5
3
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
0
1
0
200
100
400
3
R
G
= 51
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
4
5
250
350
150
50
2
HGTP2N120BND, HGT1S2N120BNDS
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PDF描述 |
|---|---|
| HGT1S2N120CN | 13A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120BNS | XC9536-7PC44I - NOT RECOMMENDED for NEW DESIGN |
| HGT1S2N120CNS | XC9536-7VQ44C - NOT RECOMMENDED for NEW DESIGN |
| HGTP2N120BN | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| HGTP2N120BND | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S2N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.6A I(C) | TO-263AB |
| HGT1S2N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 1200V, NPT Series N-Channel IGBT |
| HGT1S2N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S2N120CN | 功能描述:IGBT 晶體管 2.6A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S2N120CNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
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