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參數(shù)資料
| 型號： | HGT1S20N36G3VL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| 中文描述： | 37.7 A, 355 V, N-CHANNEL IGBT, TO-262AA |
| 封裝： | TO-262AA, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 256K |
| 代理商： | HGT1S20N36G3VL |
2004 Fairchild Semiconductor Corporation
HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1
Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR to EMITTER CURRENT vs
SATURATION VOLTAGE
FIGURE 4. COLLECTOR to EMITTER CURRENT vs
SATURATION VOLTAGE
FIGURE 5. SATURATION VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 6. SATURATION VOLTAGE vs JUNCTION
TEMPERATURE
I
C
,
V
GE
, GATE to EMITTER VOLTAGE (V)
10
2
3
4
5
40
20
0
6
30
50
1
T
C
= -40
o
C
T
C
= 25
o
C
T
C
= 175
o
C
PULSE DURATION = 250
μ
s,
DUTY CYCLE <0.5%, V
CE
= 10V
I
C
,
100
80
60
40
20
0
V
CE
, COLLECTOR to EMITTER VOLTAGE (V)
0
2
4
6
8
10
7V
5.0V
4.5V
4.0V
3.5V
V
GE
= 10V
PULSE DURATION = 250
μ
s,
DUTY CYCLE <0.5%, T
C
= +25
o
C
I
C
,
V
CE(SAT)
, SATURATION VOLTAGE (V)
T
C
= 175
o
C
V
GE
= 5.0V
V
GE
= 4.5V
0
1
2
3
4
10
20
30
40
V
GE
= 4.0V
0
4
3
2
1
0
40
30
20
10
0
I
C
,
V
CE(SAT)
, SATURATION VOLTAGE (V)
5
V
GE
= 4.5V
-40
o
C
25
o
C
175
o
C
50
-25
25
75
125
175
1.1
1.2
1.3
1.4
V
C
,
T
J
, JUNCTION TEMPERATURE (
o
C)
I
CE
= 10A
V
GE
= 4.0V
V
GE
= 4.5V
V
GE
= 5.0V
-25
25
75
125
175
T
J
, JUNCTION TEMPERATURE (
o
C)
V
C
,
1.5
1.7
1.9
2.1
V
GE
= 4.0V
= 4.5V
V
GE
= 5.0V
I
CE
= 20A
2.2
2.0
1.8
1.6
V
V
GE
= 4.5V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S20N36G3VLS | 功能描述:IGBT 晶體管 20A 360V Clamp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S20N60A4S9A | 功能描述:IGBT 晶體管 600V SMPS SERIES NCH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S20N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S20N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-263AB |
| HGT1S20N60C3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-262AA |
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