- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385377 > HGT1S14N36G3VL (HARRIS SEMICONDUCTOR) 14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N溝道,邏輯電平,電壓箝位絕緣柵雙極型晶體管.) PDF資料下載
參數(shù)資料
| 型號(hào)： | HGT1S14N36G3VL |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N溝道,邏輯電平,電壓箝位絕緣柵雙極型晶體管.) |
| 中文描述： | 18 A, N-CHANNEL IGBT, TO-262AA |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | HGT1S14N36G3VL |
3-60
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Handling Precautions for IGBT’s
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application proce-
dures, however, IGBT’s are currently being extensively used
in production by numerous equipment manufacturers in mili-
tary, industrial and consumer applications, with virtually no
damage problems due to electrostatic discharge. IGBT’s can
be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as
“ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5.
Gate Voltage Rating
-The gate-voltage rating of V
GEM
may be exceeded if I
GEM
is limited to 10mA.
Trademark Emerson and Cumming, Inc
.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S14N36G3VLS | 14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N溝道,邏輯電平,電壓箝位絕緣柵雙極型晶體管.) |
| HGTP14N36G3VL | 14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N溝道,邏輯電平,電壓箝位絕緣柵雙極型晶體管.) |
| HGT1S14N37G3VLS | 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N溝道,邏輯電平,電壓箝位IGBTs) |
| HGTP14N37G3VL | 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N溝道,邏輯電平,電壓箝位IGBTs) |
| HGT1S20N36G3VL | 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S14N36G3VLS | 功能描述:IGBT 晶體管 Coil Dr 14A 360V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S14N36G3VLS9A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 390V V(BR)CES | 18A I(C) | TO-263AB |
| HGT1S14N36G3VLT | 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S14N36G3VLT_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S14N37G3VLS | 功能描述:IGBT 晶體管 14A 370V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。