參數(shù)資料
型號: HGT1S12N60B3DS
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管)
中文描述: 27 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 6/7頁
文件大?。?/td> 117K
代理商: HGT1S12N60B3DS
6
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= P
D
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
0.5
1.0
1.5
2.5
3.0
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
10
0
20
30
40
50
25
o
C
100
o
C
150
o
C
30
20
10
0
t
r
,
I
EC
, FORWARD CURRENT (A)
5
10
20
0
15
35
25
15
5
t
rr
t
a
t
b
T
C
= 25
o
C, dI
EC
/dt = 200A/
μ
s
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
相關(guān)PDF資料
PDF描述
HGTG12N60B3D 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管)
HGT1S12N60B3S 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
HGT1S12N60C3S9A TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S12N60B3DS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60B3S 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S12N60B3S9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60C3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S12N60C3D 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: