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參數(shù)資料
| 型號： | HGT1S12N60B3DS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 27 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 117K |
| 代理商： | HGT1S12N60B3DS |
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
15
30
5
125
250
300
25
20
100
200
150
175
225
275
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
10
15
30
5
60
80
100
120
140
25
20
70
90
110
130
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, V
GE
= 10V OR 15V
I
C
,
0
20
40
60
80
100
5
7
8
9
10
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
11
12
13
14
15
120
T
C
= -55
o
C
140
160
180
4
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
C
= 25
o
C
Q
g
, GATE CHARGE (nC)
20
0
12
15
9
6
3
0
10
5
15
30
V
G
,
I
g (REF)
= 1mA, R
L
= 25
, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
35
40
45
50
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
C
0.5
1.0
1.5
2.0
2.5
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTG12N60B3D | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60B3S | 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60C3DS | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60C3S9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60C3S | 24A, 600V, UFS Series N-Channel IGBTs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S12N60B3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60C3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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