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參數(shù)資料
| 型號： | HGT1S12N60B3DS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 27 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 117K |
| 代理商： | HGT1S12N60B3DS |
3
Diode Forward Voltage
V
EC
t
rr
I
EC
= 12A
I
EC
= 12A, dI
EC
/dt = 200A/
μ
s
I
EC
= 1.0A, dI
EC
/dt = 200A/
μ
s
IGBT
-
1.7
2.1
V
Diode Reverse Recovery Time
-
32
40
ns
-
23
30
ns
Thermal Resistance Junction To Case
R
θ
JC
-
-
1.2
o
C/W
o
C/W
Diode
-
-
1.9
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
5
0
20
10
15
25
30
V
GE
= 15V
25
75
100
125
150
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
50
700
30
0
I
C
,
10
20
300
400
200
100
500
600
40
0
60
70
80
90
100
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 100
μ
H
T
C
75
o
C
75
o
C
V
GE
15V
10V
110
o
C
10V
15V
110
o
C
f
M
,
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
3
1
100
30
10
20
300
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
θ
JC
= 1.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
J
= 150
o
C, R
G
= 25
, L = 1mH, V
CE
= 480V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
13
14
15
2
4
6
8
12
16
10
30
40
50
60
70
80
100
t
SC
I
SC
V
CE
= 360V, R
G
= 25
, T
J
= 125
o
C
14
90
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTG12N60B3D | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60B3S | 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60C3DS | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60C3S9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60C3S | 24A, 600V, UFS Series N-Channel IGBTs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S12N60B3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
| HGT1S12N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60C3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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