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參數(shù)資料
| 型號： | HGT1S12N60A4DS9A |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 173K |
| 代理商： | HGT1S12N60A4DS9A |
2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
5
10
15
20
25
0
0.5
1.0
2.0
2.5
3.0
1.5
FREQUENCY = 1MHz
C
OES
C
IES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
9
1.9
10
12
2.0
2.2
2.1
11
13
14
15
16
2.3
2.4
V
C
,
I
CE
= 18A
I
CE
= 12A
I
CE
= 6A
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
0.5
1.0
1.5
2.5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
0
4
6
8
10
25
o
C
125
o
C
2
14
12
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
60
40
20
0
t
r
,
I
EC
, FORWARD CURRENT (A)
1
12
11
8
70
50
30
10
2
3
4
5
6
7
9
10
80
90
25
o
C t
rr
25
o
C t
a
25
o
C t
b
125
o
C t
b
125
o
C t
a
dI
EC
/dt = 200A/
μ
s
125
o
C t
rr
300
400
500
700
800
t
r
,
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
200
600
10
5
25
20
35
30
45
40
55
50
15
60
65
900
1000
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
I
EC
= 12A, V
CE
= 390V
300
200
100
0
200
Q
r
,
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
1000
500
350
250
150
50
300
400
900
400
600
700
800
125
o
C I
EC
= 12A
125
o
C I
EC
= 6A
25
o
C I
EC
= 6A
25
o
C I
EC
= 12A
V
CE
= 390V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
相關PDF資料 |
PDF描述 |
|---|---|
| HGTP12N60A4D | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk |
| HGT1S12N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG12N60A4 | 600V, SMPS Series N-Channel IGBTs |
| HGTG12N60D1 | 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
| HGTG12N60D1D | 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S12N60A4S | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S12N60A4S9A | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S12N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S12N60B3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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