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參數(shù)資料
| 型號： | HGT1N40N60A4D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 110 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 152K |
| 代理商： | HGT1N40N60A4D |
2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
(Unless Otherwise Specified)
(Continued)
10
30
0
150
20
130
140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
50
190
70
60
170
180
40
160
80
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
V
GE
= 12V or 15V, T
J
= 25
o
C
R
G
= 2.2
, L = 200mH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
35
30
45
40
10
30
0
20
50
70
60
40
80
55
50
65
60
70
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 2.2
, L = 200mH, V
CE
= 390V
I
C
,
0
50
100
7
8
9
10
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
250
6
300
350
400
PULSE DURATION = 250ms
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
14
0
0
100
50
150
4
10
200
250
300
350
400
6
8
12
16
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
I
G(REF)
= 1mA, R
L
= 7.5
, T
C
= 25
o
C
0
1
2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
3
5
125
25
150
4
E
T
,
I
CE
= 80A
I
CE
= 20A
I
CE
= 40A
T
J
= 125
o
C, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+E
OFF
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
10
1
500
E
T
,
I
CE
= 80A
I
CE
= 40A
I
CE
= 20A
70
E
TOTAL
= E
ON2
+E
OFF
T
J
= 125
o
C, V
CE
= 390V, V
GE
= 15V
HGT1N40N60A4D
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