參數(shù)資料
型號: HGT1N40N60A4D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述: 110 A, 600 V, N-CHANNEL IGBT
封裝: ISOTOP-4
文件頁數(shù): 4/10頁
文件大?。?/td> 152K
代理商: HGT1N40N60A4D
2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Unless Otherwise Specified)
(Continued)
0
0.25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
20
0.5
0.75
1.0
40
50
30
60
PULSE DURATION = 250ms
DUTY CYCLE < 0.5%, V
= 12V
70
80
1.25
1.75
1.5
2.0
2.25
2.5
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 25
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250ms
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0
0.25
0.5
0.75
1.0
1.25
1.75
1.5
2.0
2.25
2.5
10
20
40
50
30
60
70
80
0
E
O
,
2500
1500
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2000
1000
500
3000
0
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 2.2
, L = 200mH, V
CE
= 390V
4000
3500
4500
5000
10
0
30
40
50
60
20
70
80
5500
1200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
200
800
400
1000
1400
1600
600
10
0
30
40
50
60
20
70
80
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
1800
R
G
= 2.2
, L = 200mH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
22
24
26
28
30
32
R
G
= 2.2
, L = 200mH, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
20
10
0
40
50
60
70
30
80
34
36
38
40
42
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
40
20
20
10
0
40
50
60
70
30
80
60
120
100
80
R
G
= 2.2
, L = 200mH, V
CE
= 390V
T
J
= 125
o
C, T
J
= 25
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
HGT1N40N60A4D
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