- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384404 > HGT1N40N60A4D (FAIRCHILD SEMICONDUCTOR CORP) 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode PDF資料下載
參數(shù)資料
| 型號： | HGT1N40N60A4D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 110 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 152K |
| 代理商： | HGT1N40N60A4D |
2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
Diode Reverse Recovery Time
t
rr
I
EC
IGBT
= 40A, dI
EC
/dt = 200A/
μ
s
-
48
55
ns
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.42
o
C/W
o
C/W
Diode
-
-
1.8
NOTES:
2. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 20.
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
ON1
is the turn-on loss of the IGBT only. E
ON2
is the
Typical Performance Curves
(Unless Otherwise Specified)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
0
40
20
25
75
100
125
150
80
60
100
120
V
GE
= 15V
T
J
= 150
o
C
50
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
100
0
I
C
,
25
50
300
400
200
100
500
600
0
125
150
75
175
200
225
T
J
= 150
o
C, R
G
= 2.2
, V
GE
= 15V, L = 100
μ
H
101
10
20
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.42
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
75
o
C
V
GE
15V
100
300
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
10
11
12
15
2
10
200
1200
t
SC
I
SC
12
1000
13
14
4
6
8
400
600
800
16
V
= 390V, R
G
= 2.2
, T
J
= 125
o
C
HGT1N40N60A4D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT(35A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTP10N120BN | 35A, 1200V, NPT Series N-Channel IGBT |
| HGTP10N120BN | 35A, 1200V, NPT Series N-Channel IGBT |
| HGT1S12N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列 N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
| HGTG12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V,SMPS系列 N溝道絕緣柵雙極型晶體管（帶反并行超快速二極管）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S020N35G3VL | 制造商:Harris Corporation 功能描述: |
| HGT1S10N120BNS | 功能描述:IGBT 晶體管 35A 1200V NPT N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S10N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB |
| HGT1S10N120BNST | 功能描述:IGBT 晶體管 N-Channel IGBT NPT Series 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S11N120CNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:43A, 1200V, NPT Series N-Channel IGBT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。