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參數(shù)資料
| 型號(hào)： | HDY227 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 34K |
| 代理商： | HDY227 |
HI-SINCERITY
MICROELECTRONICS CORP.
HDY227
NPN EPITACIAL PLANAR TRANSISTOR
Spec. No. : HE6401-B
Issued Date : 1998.06.21
Revised Date : 2000.09.20
Page No. : 1/3
HSMC Product Specification
Description
Low frequency power amplifier.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................... -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 400 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ........................................................................................ 30 V
VCEO Collector to Emitter Voltage..................................................................................... 25 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current....................................................................................................... 300 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
Min.
30
25
5
-
-
-
70
Max.
-
-
-
100
100
400
400
Unit
V
V
V
nA
nA
mV
-
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
IC=300mA, IB=30mA
IC=50mA, VCE=1V
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
Classification of hFE
Rank
hFE
O
Y
G
70-140
120-240
200-400
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