參數(shù)資料
型號(hào)： HBFP0420
英文描述： High Performance Isolated Collector Silicon Bipolar Transistor
中文描述： 高性能隔離采集硅雙極晶體管
文件頁數(shù)： 4/10頁
文件大?。?/td> 85K
代理商： HBFP0420
4
HBFP-0420 Typical Scattering Parameters,
V
CE
= 2 V, I
C
= 15 mA, T
C
= 25
°
C
S
11
GHz
Mag
Ang
0.1
0.481
-22.1
0.5
0.437
-91.4
0.9
0.416
-131.0
1.0
0.414
-138.0
1.5
0.415
-163.4
1.8
0.418
-174.6
2.0
0.421
178.9
2.5
0.428
165.4
3.0
0.435
153.6
3.5
0.439
143.2
4.0
0.442
133.3
4.5
0.447
123.7
5.0
0.455
114.1
5.5
0.467
104.6
6.0
0.484
95.5
6.5
0.504
86.0
7.0
0.527
76.7
7.5
0.552
68.0
8.0
0.572
60.4
8.5
0.590
53.3
9.0
0.604
46.4
9.5
0.616
39.2
10.0
0.630
31.4
Freq.
S
21
Mag
28.438
19.969
13.526
12.378
8.619
7.254
6.549
5.262
4.418
3.811
3.362
3.024
2.749
2.522
2.327
2.163
2.014
1.880
1.765
1.658
1.565
1.484
1.406
S
12
Mag
0.007
0.027
0.039
0.041
0.053
0.060
0.065
0.077
0.089
0.101
0.113
0.125
0.137
0.148
0.159
0.169
0.179
0.188
0.197
0.205
0.213
0.221
0.228
S
22
dB
29.1
26.0
22.6
21.9
18.7
17.2
16.3
14.4
12.9
11.6
10.5
9.6
8.8
8.0
7.3
6.7
6.1
5.5
4.9
4.4
3.9
3.4
3.0
Ang
166.1
124.7
101.9
97.8
81.9
74.2
69.7
59.3
49.9
41.0
32.4
23.9
15.4
6.8
-1.8
-10.4
-18.9
-27.4
-35.5
-43.6
-51.6
-59.6
-67.7
dB
-43.0
-31.2
-28.2
-27.7
-25.5
-24.4
-23.7
-22.3
-21.0
-19.9
-18.9
-18.1
-17.3
-16.6
-16.0
-15.4
-14.9
-14.5
-14.1
-13.8
-13.4
-13.1
-12.9
Ang
82.3
60.7
53.4
52.9
49.6
47.9
46.6
42.9
38.8
34.1
29.0
23.7
17.9
11.8
5.4
-1.0
-7.6
-14.3
-20.6
-27.1
-33.6
-40.3
-47.2
Mag
0.959
0.702
0.500
0.465
0.341
0.292
0.269
0.226
0.196
0.177
0.163
0.152
0.138
0.120
0.100
0.077
0.059
0.060
0.077
0.096
0.112
0.123
0.134
Ang
-10.5
-41.4
-57.2
-59.6
-69.8
-74.4
-77.6
-84.1
-91.1
-96.8
-102.1
-107.2
-113.4
-121.1
-131.4
-148.2
-178.2
144.1
116.6
100.7
89.0
77.9
66.5
HBFP-0420 Noise Parameters:
V
CE
= 2 V, I
C
= 15 mA
Freq.
GHz
F
min
dB
Γ
opt
R
N
/50
8.0
7.8
6.7
6.3
6.4
6.1
6.5
7.7
9.4
11.5
14.1
17.8
22.9
28.7
35.5
43.0
51.7
61.3
71.0
81.1
90.5
G
a
dB
Mag
Ang
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
1.57
1.58
1.63
1.67
1.74
1.72
1.76
1.84
1.89
1.97
2.03
2.15
2.28
2.36
2.42
2.54
2.65
2.83
2.96
3.10
3.14
0.033
0.054
0.169
0.252
0.234
0.306
0.343
0.365
0.383
0.407
0.431
0.463
0.483
0.513
0.538
0.560
0.581
0.602
0.621
0.640
0.653
-135.5
-151.8
-155.2
-148.1
-158.3
-149.2
-142.2
-133.5
-124.4
-115.6
-106.3
-96.8
-87.3
-77.3
-67.8
-59.2
-51.4
-44.6
-37.2
-29.9
-21.8
23.88
23.04
19.79
18.34
17.52
15.71
14.24
12.97
11.89
11.01
10.22
9.53
8.89
8.32
7.79
7.30
6.85
6.42
5.99
5.61
5.23
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.
相關(guān)PDF資料
PDF描述
HBFP-0420-BLK High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420-TR1 High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420-TR2 High Performance Isolated Collector Silicon Bipolar Transistor
HBO1000W Insulation Displacement (IDC) Connector; Number of Contacts:16; Contact Termination:IDC; Gender:Female
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HBFP-0420 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3V High Performance Transistor
HBFP-0420-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420-TR1 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420-TR2 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420-TR3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 36MA I(C) | SOT-343R
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