參數(shù)資料
型號： HBFP0420
英文描述： High Performance Isolated Collector Silicon Bipolar Transistor
中文描述： 高性能隔離采集硅雙極晶體管
文件頁數(shù)： 3/10頁
文件大?。?/td> 85K
代理商： HBFP0420
3
HBFP-0420 Typical Scattering Parameters,
V
CE
= 2 V, I
C
= 5 mA, T
C
= 25
°
C
S
11
GHz
Mag
Ang
0.1
0.746
-11.9
0.5
0.682
-55.6
0.9
0.607
-90.1
1.0
0.585
-97.5
1.5
0.532
-128.3
1.8
0.512
-143.1
2.0
0.502
-151.6
2.5
0.490
-169.8
3.0
0.483
-174.6
3.5
0.480
161.4
4.0
0.479
149.2
4.5
0.482
137.6
5.0
0.487
126.5
5.5
0.497
115.4
6.0
0.513
105.0
6.5
0.532
94.6
7.0
0.553
84.0
7.5
0.575
74.5
8.0
0.592
66.0
8.5
0.609
58.2
9.0
0.623
50.7
9.5
0.635
43.0
10.0
0.648
34.5
Freq.
S
21
Mag
14.853
12.473
9.909
9.181
6.918
5.952
5.453
4.422
3.786
3.286
2.908
2.629
2.389
2.205
2.040
1.902
1.778
1.662
1.559
1.469
1.393
1.312
1.248
S
12
Mag
0.009
0.038
0.056
0.059
0.072
0.077
0.080
0.088
0.095
0.102
0.110
0.118
0.127
0.136
0.145
0.153
0.162
0.171
0.179
0.186
0.195
0.202
0.209
S
22
dB
23.4
21.9
19.9
19.3
16.8
15.5
14.7
12.9
11.6
10.3
9.3
8.4
7.6
6.9
6.2
5.6
5.0
4.4
3.9
3.3
2.9
2.4
1.9
Ang
171.0
139.8
116.8
112.2
93.1
83.4
78.4
65.8
55.2
45.2
35.7
26.5
17.4
8.3
-0.8
-9.8
-18.7
-27.5
-36.1
-44.4
-52.6
-60.8
-69.1
dB
-41.4
-28.5
-25.0
-24.5
-22.9
-22.3
-21.9
-21.2
-20.5
-19.8
-19.2
-18.5
-17.9
-17.3
-16.8
-16.3
-15.8
-15.3
-14.9
-14.6
-14.2
-13.9
-13.6
Ang
84.8
63.6
49.3
46.9
37.2
33.2
31.2
26.9
23.4
19.8
16.3
12.5
8.1
3.5
-1.5
-7.1
-12.6
-18.2
-24.0
-29.8
-35.4
-41.6
-48.0
Mag
0.985
0.861
0.696
0.661
0.516
0.450
0.419
0.359
0.314
0.286
0.266
0.248
0.233
0.209
0.189
0.161
0.134
0.115
0.110
0.113
0.120
0.127
0.130
Ang
-6.6
-29.4
-46.6
-49.3
-62.2
-67.7
-71.6
-78.4
-86.3
-92.5
-98.1
-104.1
-110.5
-117.9
-126.4
-137.1
-152.0
-171.2
167.1
147.2
130.6
118.0
103.9
HBFP-0420 Noise Parameters:
V
CE
= 2 V, I
C
= 5 mA
Freq.
GHz
F
min
dB
Γ
opt
R
N
/50
9.6
9.2
7.6
6.8
6.1
5.4
5.0
4.9
5.0
6.0
6.8
9.3
12.3
15.8
21.4
26.8
33.6
41.7
50.4
58.2
68.3
G
a
dB
Mag
Ang
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
1.00
1.02
1.10
1.14
1.18
1.25
1.32
1.39
1.49
1.58
1.63
1.75
1.88
1.94
2.05
2.15
2.23
2.47
2.59
2.63
2.74
0.281
0.266
0.187
0.175
0.154
0.184
0.226
0.254
0.292
0.312
0.355
0.375
0.416
0.453
0.486
0.506
0.532
0.556
0.589
0.610
0.624
28.8
36.6
68.3
94.1
118.4
146.5
165.9
-176.8
-162.3
-147.3
-135.5
-121.0
-108.5
-98.1
-84.4
-74.8
-65.0
-56.8
-48.4
-40.4
-31.0
22.19
21.39
18.30
16.92
16.21
14.34
13.00
11.79
10.79
9.95
9.22
8.55
7.99
7.47
6.99
6.49
6.04
5.65
5.32
4.91
4.56
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.
相關PDF資料
PDF描述
HBFP-0420-BLK High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420-TR1 High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420-TR2 High Performance Isolated Collector Silicon Bipolar Transistor
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相關代理商/技術參數(shù)
參數(shù)描述
HBFP-0420 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3V High Performance Transistor
HBFP-0420-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420-TR1 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420-TR2 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420-TR3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 36MA I(C) | SOT-343R
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