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參數(shù)資料
| 型號(hào)： | HBFP-0420-TR2 |
| 英文描述： | High Performance Isolated Collector Silicon Bipolar Transistor |
| 中文描述： | 高性能隔離采集硅雙極晶體管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 85K |
| 代理商： | HBFP-0420-TR2 |
High Performance Isolated
Collector Silicon Bipolar
Transistor
Technical Data
Features
Ideal for High Gain, Low
Noise Applications
Transition Frequency
f
T
= 25 GHz
Typical Performance at
1.8 GHz
Associated Gain of 17 dB
and Noise Figure of 1.1 dB
at 2V and 5 mA
P
1dB
of 12 dBm at 2 V and
20 mA
Can be Used Without
Impedance Matching
Applications
LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
Oscillator for
TV Delivery
and TVRO Systems up to
10 GHz
HBFP-0420
Description
Hewlett Packard’s HBFP-0420 is a
high performance isolated
collector silicon bipolar junction
transistor housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
HBFP-0420 provides an associated
gain of 17 dB, noise figure of
1.1 dB, and P
1dB
of 12 dBm at
1.8 GHz. Because of high gain and
low current characteristics,
HBFP-0420 is ideal for
cellular/
PCS handsets
as well as for
C-Band and K u-Band
applications.
This product is based on a 25 GHz
transition frequency fabrication
process, which enables the
products to be used for high
performance, low noise applica-
tions at 900 MHz, 1.9 GHz,
2.4 GHz, and beyond.
Surface Mount Plastic
Package/SOT-343 (SC-70)
Outline 4T
Pin Configuration
Collector
Emitter
Base
0
Emitter
Note:
Package marking provides orientation
and identification.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HBFP-0420-TR3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 36MA I(C) | SOT-343R |
| HBFP-0450 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3V High Performance Transistor |
| HBFP-0450-TR1 | 制造商:HEWLETT 功能描述: |
| HBFP-0450-TR3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 100MA I(C) | SOT-343 |
| HBFR113-S | 制造商:SEOUL 制造商全稱:Seoul Semiconductor 功能描述:Surface-mounted chip LED device |
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