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參數(shù)資料
| 型號(hào)： | HBFP-0420-BLK |
| 英文描述： | High Performance Isolated Collector Silicon Bipolar Transistor |
| 中文描述： | 高性能隔離采集硅雙極晶體管 |
| 文件頁(yè)數(shù)： | 9/10頁(yè) |
| 文件大小： | 85K |
| 代理商： | HBFP-0420-BLK |
9
Device Orientation
Tape Dimensions
For Outline 4T
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
P
P
0
P
2
F
W
D
1
D
E
A
0
8
°
MAX.
t
1
(CARRIER TAPE THICKNESS)
5
°
MAX.
B
0
K
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.24
±
0.10
2.34
±
0.10
1.22
±
0.10
4.00
±
0.10
1.00 + 0.25
0.088
±
0.004
0.092
±
0.004
0.048
±
0.004
0.157
±
0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55
±
0.05
4.00
±
0.10
1.75
±
0.10
0.061
±
0.002
0.157
±
0.004
0.069
±
0.004
PERFORATION
WIDTH
THICKNESS
W
t
1
8.00
±
0.30
0.255
±
0.013
0.315
±
0.012
0.010
±
0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50
±
0.05
2.00
±
0.05
0.138
±
0.002
0.079
±
0.002
DISTANCE
03
03
03
03
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HBFP-0420-TR1 | High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR2 | High Performance Isolated Collector Silicon Bipolar Transistor |
| HBO1000W | Insulation Displacement (IDC) Connector; Number of Contacts:16; Contact Termination:IDC; Gender:Female |
| HBO1000WD | Lamps for Photolithography |
| HBO1002W | Lamps for Photolithography |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HBFP-0420-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:High Performance Isolated Collector Silicon Bipolar Transistor |
| HBFP-0420-TR3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 4.5V V(BR)CEO | 36MA I(C) | SOT-343R |
| HBFP-0450 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3V High Performance Transistor |
| HBFP-0450-TR1 | 制造商:HEWLETT 功能描述: |
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