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參數(shù)資料
| 型號： | HBFP-0420-BLK |
| 英文描述： | High Performance Isolated Collector Silicon Bipolar Transistor |
| 中文描述： | 高性能隔離采集硅雙極晶體管 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 85K |
| 代理商： | HBFP-0420-BLK |
6
HBFP-0420 Die Model and PSPICE Parameters
CMP9
R
CMP7
R
CMP8
R
CMP69
R
R-1 OH
R=.194 OH
R=7.78 OH
R=12 OH
TEMP=
MODEL=DBE
REGION=
AREA=
AREA=3
REGION=
MODEL=BJTMODEL
AREA=
REGION=
MODEL=DCS
TEMP=
AREA=
REGION=
MODEL=DBC
TEMP=
C=7E-3 pF
C=19E-3 pF
XX
E
CMP1
NPNBJTSUBST
CMP5
C
CMP6
C
CMP2
DIODE
CMP16
DIODE
CMP3
DIODE
B
XX
X
C
IS=I.40507E-17
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
RS=
CJO=2.393E-14
TT=
EG=
VJ=0.729
M=0.44
N=1
FC=0.8
CMP10
DIODEMODELFORM
# DIODE MODEL #
MODEL = DBC
IS=IE-24
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
RS=2.17347E2
CJO=8.974E-14
TT=
EG=
VJ=0.6
M=0.42
N=
FC=0.8
CMP12
DIODEMODELFORM
# DIODE MODEL #
MODEL = DCS
IS=IE-24
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
RS=
CJO=2.593E-14
TT=
EG=
VJ=0.8971
M=2.292E-1
N=1.0029
FC=0.8
CMP11
DIODEMODELFORM
# DIODE MODEL #
MODEL = DCE
NPN=yes
PNP=
Forward
BF=1E6
IKE=1.4737E-1
ISE=7.094E-20
NE=1.006
VAF=4.4E1
NF=1
TF=5.3706E-12
XTF=20
VTF=0.8
ITF=2.21805486E-1
PTF=22
XTB=0.7
APPROXOB=yes
Reverse
BR=1
IKR=1.1E-2
ISC=
NC=2
VAR=3.37
NR=1.005
TR=4E-9
Noise
KF=
AF=
KB=
AB=
FB=
Diode and junction
EG=1.17
IS=4.4746E VJC=.6775
IMAX=
XTI=3
TNOM=21
Substrate
S5=
NS=
CJS=
VJS=
MJS=
Parasitics
RB=9.30144818
IRB=3.029562E-6
RBM=.1
RE=
RC=
CJC=2.7056E-14
MJC=0.3319
FC=0.8
CJE=7.474248E
VJE=0.9907
MJE=0.5063
CMP68
BITMODELFORM
# BJT MODEL #
MODEL = BJTMODEL
XC
This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more
precise and accurate design, please refer to the measured data in this data sheet.
Note:
The value of beta was high (BF =1E6) to compensate for the fact that diode DBE reduces the current going into the
base (current flows through DBE). The diodes are necessary to model the non-linear effects.
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