
HI-SINCERITY
MICROELECTRONICS CORP.
HBC807
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 1/3
HBC807
HSMC Product Specification
Description
The HBC807 is designed for switching and AF amplifier amplification
suitable for driver stages and low power output stages.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature .......................................................................................... -55 to +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCES Collector to Base Voltage ........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -45 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -800 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCEO
BVCES
BVEBO
ICES
IEBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min.
-45
-50
-5
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
-
-
-
100
-
Max.
-
-
-
-100
-100
-700
-1.2
630
-
12
Unit
V
V
V
nA
nA
mV
V
Test Conditions
IC=-10mA
IC=-100uA
IE=-100uA
VCE=-25V
VEB=-4V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-300mA
VCE=-1V, IC=-100mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE
Rank
hFE
9FA(16)
100-250
9FB(25)
160-400
9FC(40)
250-630
SOT-23