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參數(shù)資料
| 型號： | HBC817 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 28K |
| 代理商： | HBC817 |
HI-SINCERITY
MICROELECTRONICS CORP.
HBC817
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6831
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 1/3
HBC817
HSMC Product Specification
Description
The HBC817 is designed for switching and AF amplifier amplification
suitable for driver stages and low power output stages.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature .......................................................................................... -55 to +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCES Collector to Base Voltage ......................................................................................... 50 V
VCEO Collector to Emitter Voltage...................................................................................... 45 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current ....................................................................................................... 800 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCEO
BVCES
BVEBO
ICES
IEBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min.
45
50
5
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
-
-
-
100
-
Max.
-
-
-
100
100
700
1.2
630
-
12
Unit
V
V
V
nA
nA
mV
V
Test Conditions
IC=10mA
IC=100uA
IE=100uA
VCE=25V
VEB=4V
IC=500mA, IB=50mA
VCE=1V, IC=300mA
VCE=1V, IC=100mA
VCE=5V, IC=10mA. f=100MHz
VCB=10V, f=1.0MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE
Rank
hFE
8FA(16)
100-250
8FB(25)
160-400
8FC(40)
250-630
SOT-23
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