參數(shù)資料
型號(hào)： HBC847
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 30K
代理商： HBC847
HI-SINCERITY
MICROELECTRONICS CORP.
HBC847
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6827
Issued Date : 1993.11.28
Revised Date : 2002.10.24
Page No. : 1/3
HBC847
HSMC Product Specification
Description
The HBC847 is designed for switching and AF amplifier amplification
suitable for automatic insertion in thick and thin-film circuits.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature .......................................................................................... -55 to +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 50 V
VCEO Collector to Emitter Voltage...................................................................................... 45 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 100 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
VBE(on)1
VBE(on)2
*hFE
fT
Cob
Min.
50
45
6
-
-
-
-
-
580
-
110
-
-
Typ.
-
-
-
-
90
200
700
900
-
-
-
300
3.5
Max.
-
-
-
15
250
600
-
-
700
770
800
-
6
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=30V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE
Rank
hFE
A
B
C
110-220
200-450
420-800
SOT-23
相關(guān)PDF資料
PDF描述
HBC848 NPN EPITAXIAL PLANAR TRANSISTOR
HBC856 PNP EPITAXIAL PLANAR TRANSISTOR
HBC857 PNP EPITAXIAL PLANAR TRANSISTOR
HBC858 PNP EPITAXIAL PLANAR TRANSISTOR
HBD136 PNP POWER TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HBC848 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
HBC856 制造商:HSMC 制造商全稱:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR
HBC857 制造商:HSMC 制造商全稱:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR
HBC858 制造商:HSMC 制造商全稱:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR
HBC8C3G 制造商:DIALIGHT 制造商全稱:Dialight Corporation 功能描述:SafeSite Series LED High Bay Fixture
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*