
HI-SINCERITY
MICROELECTRONICS CORP.
HBC547
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6418-C
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 1/4
HSMC Product Specification
Description
The HBC547 is designed for use in driver stage of audio amplifier.
Features
High Breakdown Voltage: 45V
High DC Current Gain: 110-800 at IC=2mA
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ........................................................................................ 50 V
VCEO Collector to Emitter Voltage..................................................................................... 45 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ....................................................................................................... 100mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VBE(on)1
VBE(on)2
*VBE(sat)1
*VBE(sat)2
*VCE(sat)1
*VCE(sat)2
*hFE
fT
Cob
Min.
50
45
6
-
0.58
-
-
-
-
-
110
-
-
Typ.
-
-
-
-
-
-
0.7
0.9
-
-
-
300
-
Max.
-
-
-
15
0.7
0.77
-
-
0.25
0.6
800
-
4.5
Unit
V
V
V
nA
V
V
V
V
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
IC=2mA, VCE=5V
IC=10mA, VCE=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA, f=100MHz
VCE=10V, IE=0, f=1MHZ
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHZ
Pf
Classification of hFE
Rank
Range
A
B
C
110-220
200-450
420-800