
HI-SINCERITY
MICROELECTRONICS CORP.
HBC546
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6417
Issued Date : 1992.11.25
Revised Date : 2002.02.18
Page No. : 1/3
HBC546
HSMC Product Specification
Description
The HBC546 is primarily intended for use in driver stage of audio
amplifiers.
Features
High Breakdown Voltage: 65V
High DC Current Gain: 110-800 at IC=2mA VCE=5V
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 80 V
VCEO Collector to Emitter Voltage...................................................................................... 65 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 100 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VBE(on)1
VBE(on)2
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE
fT
Cob
Min.
80
65
6
-
-
580
-
-
-
-
110
-
-
Typ.
-
-
-
-
-
-
-
-
700
900
-
300
-
Max.
-
-
-
15
770
700
250
600
-
-
800
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
IC=10mA, VCE=5V
IC=2mA, VCE=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
PF
4.5
Classification of hFE
Rank
Range
A
B
C
110-220
200-450
420-800
TO-92