參數(shù)資料
型號(hào)： HB56SW3272ESK-6
廠商： Hitachi,Ltd.
英文描述： 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
中文描述： 256MB的內(nèi)存緩沖EDO公司的DRAM 32 Mword × 72位，4K的刷新，2銀模塊（36個(gè)在16米x 4部分）
文件頁(yè)數(shù)： 1/29頁(yè)
文件大?。?/td> 338K
代理商： HB56SW3272ESK-6
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM
32-Mword
×
72-bit, 4k Refresh, 2 Bank Module
(36 pcs of 16M
×
4 components)
ADE-203-872B (Z)
Rev. 1.0
June 23, 1998
Description
The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been
developed an optimized main memory solution for 4 and 8-byte processor applications. The
HB56SW3272ESK is 32 M
×
72 Dynamic RAM Module, mounted 36 pieces of 64-Mbit DRAM
(HM5165405) sealed in TCP package and 2 pieces of 16-bit BiCMOS line driver sealed in TSSOP
package. The HB56SW3272ESK offer Extended Data Out (EDO) Page Mode as a high speed access
mode. An outline of the HB56SW3272ESK are 168-pin socket type package (dual lead out). Therefore, the
HB56SW3272ESK make high density mounting possible without surface mount technology. The
HB56SW3272ESK provide common data inputs and outputs. Decoupling capacitors are mounted beside
each TCP on its module board.
Note:
Do not push the cover or drop the modules in order to protect from mechanical defects, which
would be electrical defects.
Features
168-pin socket type package (Dual lead out)
Lead pitch : 1.27 mm
Single 3.3 V supply (
±
0.3 V)
High speed
Access time: t
RAC
= 50 ns/60 ns (max)
Access time: t
CAC
= 18 ns/20 ns (max)
Low power dissipation
Active mode: 8.78 W/7.49 W (max)
Standby mode (TTL): 295.2 mW (max)
JEDEC standard outline buffered 8-byte DIMM
Buffered input except
RAS
and DQ
相關(guān)PDF資料
PDF描述
HB56SW3272ESK 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
HB56UW1673E 128MB Buffered EDO DRAM DIMM(128MB 緩沖 EDO DRAM DIMM)
HB56UW3272ETK 256MB Buffered EDO DRAM DIMM(256MB 緩沖 EDO DRAM DIMM)
HBAT-5400 High Performance Schottky Diode for Transient Suppression(應(yīng)用于瞬變抑制的高性能肖特基二極管)
HBAT-540B High Performance Schottky Diode for Transient Suppression(應(yīng)用于瞬變抑制的高性能肖特基二極管)
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HB56SW464DB-6B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module
HB56SW464DB-6BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module
HB56SW464DB-6BLS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module
HB56SW464DB-6L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module
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