參數(shù)資料
型號(hào)： HB54A2568KN-10B
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 256MB DDR SDRAM S.O.DIMM
中文描述： 32M X 64 DDR DRAM MODULE, 0.8 ns, DMA200
封裝： SODIMM-200
文件頁(yè)數(shù)： 13/16頁(yè)
文件大?。?/td> 514K
代理商： HB54A2568KN-10B
HB54A2568KN-A75B/B75B/10B
Preliminary Data Sheet E0148H20 (Ver. 2.0)
13
DC Characteristics 1 (TA = 0 to 65°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current (ACTV-PRE)
ICC0
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
600
560
480
820
760
680
144
120
96
320
280
240
200
160
120
400
360
320
1220
1160
1100
1160
1100
1040
1020
980
880
mA
CKE
≥
VIH, tRC = min. 1, 2, 5
Operating current (ACTV-READ-PRE)
ICC1
mA
CKE
≥
VIH, BL = 2,
CL = 2.5, tRC = min.
1, 2, 5
Idle power down standby current
ICC2P
mA
CKE
≤
VIL
4
Idle standby current
ICC2N
mA
CKE
≥
VIH, /CS
≥
VIH 4
Active power down standby current
ICC3P
mA
CKE
≤
VIL
3
Active standby current
ICC3N
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = max.
3
Operating current
(Burst read operation)
ICC4R
mA
CKE
≥
VIH, BL = 2,
CL = 2.5
1, 2, 5, 6
Operating current
(Burst write operation)
ICC4W
mA
CKE
≥
VIH, BL = 2,
CL = 2.5
1, 2, 5, 6
Auto refresh current
ICC5
mA
tRFC = min.,
Input
≤
VIL or
≥
VIH
Self refresh current
ICC6
24
mA
Input
≥
VCC – 0.2V
Input
≤
0.2V.
Notes. 1. These ICC data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. The ICC data on this table are measured with regard to tCK = min. in general.
DC Characteristics 2 (TA = 0 to 65°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–10
10
μA
VCC
≥
VIN
≥
VSS
Output leakage current
ILO
–10
10
μA
VCC
≥
VOUT
≥
VSS
Output high voltage
VOH
VTT + 0.76
—
V
IOH (max.) = –15.2mA
Output low voltage
VOL
—
VTT – 0.76
V
IOL (min.) = 15.2mA
相關(guān)PDF資料
PDF描述
HB54A2568KN-A75B 256MB DDR SDRAM S.O.DIMM
HB54A2568KN-B75B 256MB DDR SDRAM S.O.DIMM
HB54A5129F1U-B75B 512MB Registered DDR SDRAM DIMM
HB54A5129F1U 512MB Registered DDR SDRAM DIMM
HB54A5129F1U-10B 512MB Registered DDR SDRAM DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB54A2568KN-A75B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM S.O.DIMM
HB54A2568KN-B75B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM S.O.DIMM
HB54A2569F1 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM
HB54A2569F1-10B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM
HB54A2569F1-A75B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB, 512MB Registered DDR SDRAM DIMM
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