參數(shù)資料
型號(hào): HB52RF649DC
廠商: Elpida Memory, Inc.
英文描述: 512MB Unbuffered SDRAM S.O.DIMM
中文描述: 512MB的無緩沖內(nèi)存的SODIMM
文件頁(yè)數(shù): 8/16頁(yè)
文件大小: 464K
代理商: HB52RF649DC
HB52RF649DC-B, HB52RD649DC-B
Data Sheet E0223H30 (Ver. 3.0)
8
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
–0.5 to VCC + 0.5
(
4.6 (max.))
–0.5 to +4.6
V
1
Supply voltage relative to VSS
VCC
V
1
Short circuit output current
IOUT
50
mA
Power dissipation
PT
9.0
W
Operating temperature
Topr
0 to +65
°C
Storage temperature
Tstg
–55 to +125
°C
Note: 1. Respect to VSS.
DC Operating Conditions (TA = 0 to +65°C)
Parameter
Symbol
min.
max.
Unit
Note
Supply voltage
VCC
3.0
3.6
V
1, 2
VSS
0
0
V
3
Input high voltage
VIH
2.0
VCC + 0.3
V
1, 4
Input low voltage
VIL
–0.3
0.8
V
1, 5
Ambient illuminance
100
lx
Notes: 1. All voltage referred to VSS.
2. The supply voltage with all VCC pins must be on the same level.
3. The supply voltage with all VSS pins must be on the same level.
4. VIH (max.) = VCC + 2.0V for pulse width
3ns at VCC.
5. VIL (min.) = VSS – 2.0V for pulse width
3ns at VSS.
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