參數(shù)資料
型號: HB52F88EM
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內(nèi)存(64 MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 59/71頁
文件大?。?/td> 906K
代理商: HB52F88EM
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
59
The CK pin is stabilized within 100
μ
s after power stabilizes before the following initialization sequence.
The CKE and DQMB is driven to high between power stabilizes and the initialization sequence.
This SDRAM module has V
CC
clamp diodes for CK, CKE, S, DQMB and DQ pins. If these pins go high
before power up, the large current flows from these pins to V
CC
through the diodes.
Initialization sequence:
When 200
μ
s or more has past after the above power-up sequence, all banks must
be precharged using the precharge command (PALL). After t
RP
delay, set 8 or more auto refresh commands
(REF). Set the mode register set command (MRS) to initialize the mode register. We recommend that by
keeping DQMB to High, the output buffer becomes High-Z during Initialization sequence, to avoid DQ bus
contention on memory system formed with a number of device.
V
CC
Power up sequence
Initialization sequence
100
μ
s
0 V
Low
Low
Low
CKE, DQMB
CK
S
, DQ
200
μ
s
Power stabilize
相關(guān)PDF資料
PDF描述
HB52F168EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
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HB52F89EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
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