參數(shù)資料
型號: HB52F88EM
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內(nèi)存(64 MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 44/71頁
文件大小: 906K
代理商: HB52F88EM
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
44
CE Latency
Burst Length
Write operation:
Burst write or single write mode is selected by the OPCODE (A13, A12, A11, A10, A9,
A8) of the mode register.
1. Burst write:
A burst write operation is enabled by setting OPCODE (A9, A8) to (0, 0). A burst write starts
in the same clock as a write command set. (The latency of data input is 0 clock.) The burst length can be set
to 1, 2, 4, 8, and full-page, like burst read operations. The write start address is specified by the column ad-
dress and the bank select address (BA) at the write command set cycle.
READ
CK
Command
Dout
ACTV
Row
Column
Address
CL = 3
out 0
out 1
out 2
out 3
t
RCD
CL =
CE
latency
Burst Length = 4
READ
CK
Command
Dout
ACTV
Row
Column
out 0
out 6
out 7
out 8
Address
out 0 out 1
out 4
out 5
out 0
out 1 out 2
out 3
BL = 1
out 0 out 1 out 2
out 3
out 0
out 1 out 2
out 3
out 6
out 7
out 4
out 5
out 0-1
out 0
out 1
BL = 2
BL = 4
BL = 8
BL = full page
t
RCD
BL : Burst Length
CE
Latency = 3
WRIT
CK
Command
Din
ACTV
Row
Column
in 0
in 6
in 7
in 8
Address
in 1
in 4
in 5
in 3
BL = 1
in 6
in 7
in 4
in 5
in 0-1
in 0
in 1
BL = 2
BL = 4
BL = 8
BL = full page
t
RCD
in 0
in 0
in 0
in 0
in 1
in 1
in 1
in 2
in 2
in 2
in 3
in 3
CE
Latency = 3
相關(guān)PDF資料
PDF描述
HB52F168EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F169EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F89EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
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