- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370430 > HB52F88EM (Hitachi,Ltd.) 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) PDF資料下載
參數(shù)資料
| 型號： | HB52F88EM |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
| 中文描述： | 64 MB的無緩沖SDRAM的內(nèi)存（64 MB的未緩沖同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 53/71頁 |
| 文件大小： | 906K |
| 代理商： | HB52F88EM |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁當(dāng)前第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
53
2. Same bank:
The consecutive write command from read with auto precharge (the same bank) is illegal.
It is necessary to separate the two commands with a bank active command.
Write with auto precharge to Read command interval
1. Different bank:
When some banks are in the active state, the second read command (another bank) is
executed. However, in case of a burst write, data will continue to be written until one clock before the read
command is executed. The internal auto-precharge of one bank starts at the next clock of the second com-
mand.
Write with Auto Precharge to Read Command Interval
(Different bank)
2. Same bank:
The consecutive read command from write with auto precharge (the same bank) is illegal.
It is necessary to separate the two commands with a bank active command.
Read command to Precharge command interval (same bank):
CK
Command
BA
Dout
Din
READ A
WRIT
in B0
in B1
in B2
in B3
Burst Length = 4
bank0
Read A
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
DQMB
CL = 3
High-Z
CK
Command
BA
Dout
Din
WRIT A
READ
out B0
out B1
out B2
out B3
CE
Latency = 3
Burst Length = 4
bank0
Write A
bank3
Read
Note: Internal auto-precharge starts at the timing indicated by " ".
DQMB
in A0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52F168EN | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
| HB52F169EN | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
| HB52F89EM | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
| HB52R1289E22 | 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-A6B | 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52R1289E22 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E2-A6A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R1289E2-B6A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。