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參數(shù)資料
| 型號(hào)： | HB52F649E1-75B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| 中文描述： | 64M X 72 SYNCHRONOUS DRAM MODULE, 6.3 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁(yè)數(shù)： | 6/16頁(yè) |
| 文件大?。?/td> | 143K |
| 代理商： | HB52F649E1-75B |
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HB52F649E1-75B
Data Sheet E0021H10
6
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
22
SDRAM device attributes:
General
0
0
0
0
1
1
1
0
0E
V
CC
± 10%
23
SDRAM cycle time
(2nd highest
CE
latency)
10 ns
1
0
1
0
0
0
0
0
A0
CL = 2
*
5
24
SDRAM access from Clock
(2nd highest
CE
latency)
6 ns
0
1
1
0
0
0
0
0
60
25
SDRAM cycle time
(3rd highest
CE
latency)
Undefined
0
0
0
0
0
0
0
0
00
26
SDRAM access from Clock (3rd
highest
CE
latency)
Undefined
0
0
0
0
0
0
0
0
00
27
Minimum row precharge time
0
0
0
1
0
1
0
0
14
20 ns
28
Row active to row active min
RE
to
CE
delay min
Minimum
RE
pulse width
0
0
0
0
1
1
1
1
0F
15 ns
29
0
0
0
1
0
1
0
0
14
20 ns
30
0
0
1
0
1
1
0
1
2D
45 ns
31
Density of each bank on module 1
0
0
0
0
0
0
0
80
1 bank
512M byte
32
Address and command signal
input setup time
0
0
0
1
0
1
0
1
15
1.5 ns*
5
33
Address and command signal
input hold time
0
0
0
0
1
0
0
0
08
0.8 ns*
5
34
Data signal input setup time
0
0
0
1
0
1
0
1
15
1.5 ns*
5
35
Data signal input hold time
0
0
0
0
1
0
0
0
08
0.8 ns*
5
36 to 61 Superset information
0
0
0
0
0
0
0
0
00
Future use
62
SPD data revision code
0
0
0
0
0
0
1
0
02
JEDEC2
63
Checksum for bytes 0 to 62
1
0
1
0
1
1
0
0
AC
172
64
Manufacturer’s JEDEC ID code
0
0
0
0
0
1
1
1
07
HITACHI
65 to 71 Manufacturer’s JEDEC ID code
0
0
0
0
0
0
0
0
00
72
Manufacturing location
×
×
×
×
×
×
×
×
××
*
2
(ASCII-
8bit code)
73
Manufacturer
’
s part number
0
1
0
0
1
0
0
0
48
H
74
Manufacturer
’
s part number
0
1
0
0
0
0
1
0
42
B
75
Manufacturer
’
s part number
0
0
1
1
0
1
0
1
35
5
76
Manufacturer
’
s part number
0
0
1
1
0
0
1
0
32
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52F649E1 | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| HB52F88EM | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
| HB52F168EN | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
| HB52F169EN | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
| HB52F89EM | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52F649EN-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus PC133 SDRAM |
| HB52R1289E22 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E2-A6A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
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