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參數(shù)資料
| 型號(hào)： | HB52F649E1-75B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| 中文描述： | 64M X 72 SYNCHRONOUS DRAM MODULE, 6.3 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 143K |
| 代理商： | HB52F649E1-75B |
HB52F649E1-75B
Data Sheet E0021H10
10
DC Characteristics
(Ta = 0 to 55
°
C, V
CC
= 3.3 V ± 0.3 V, V
SS
= 0 V)
HB52F649E1-75B
PC133
CE
latency = 4
PC100
CE
latnecy = 3
Parameter
Symbol Min
Max
Min
Max
Unit Test conditions
Notes
Operating current
I
CC1
—
2675
—
2675
mA
Burst length = 1
t
RC
= min
CKE = V
IL
, t
CK
= 12 ns 6
1, 2, 3
Standby current in power
down
I
CC2P
—
749
—
749
mA
Standby current in power
down
(input signal stable)
I
CC2PS
—
731
—
731
mA
CKE = V
IL
, t
CK
=
∞
7
Standby current in non
power down
I
CC2N
—
1055
—
1055
mA
CKE,
S
= V
IH
,
t
CK
= 12 ns
CKE = V
IL
, t
CK
= 12 ns 1, 2, 6
4
Active standby current in
power down
I
CC3P
—
767
—
767
mA
Active standby current in
non power down
I
CC3N
—
1235
—
1235
mA
CKE,
S
= V
IH
,
t
CK
= 12 ns
t
CK
= min, BL = 4
t
RC
= min
V
IH
≥
V
–
0.2 V
V
IL
≤
0.2 V
0
≤
Vin
≤
V
CC
0
≤
Vout
≤
V
CC
DQ = disable
1, 2, 4
Burst operating current
I
CC4
I
CC5
I
CC6
—
3035
—
2405
mA
1, 2, 5
Refresh current
—
4655
—
4655
mA
3
Self refresh current
—
749
—
749
mA
8
Input leakage current
I
LI
I
LO
–
10
10
–
10
10
μA
Output leakage current
–
10
10
–
10
10
μA
Output high voltage
V
OH
V
OL
2.4
—
2.4
—
V
I
OH
=
–
4 mA
I
OL
= 4 mA
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK operating current.
7. After power down mode, no CK operating current.
8. After self refresh mode set, self refresh current.
—
0.4
—
0.4
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52F649EN-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus PC133 SDRAM |
| HB52R1289E22 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E2-A6A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
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