參數(shù)資料
型號(hào): HB52F649E1-75B
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
中文描述: 64M X 72 SYNCHRONOUS DRAM MODULE, 6.3 ns, DMA168
封裝: DIMM-168
文件頁(yè)數(shù): 13/16頁(yè)
文件大小: 143K
代理商: HB52F649E1-75B
HB52F649E1-75B
Data Sheet E0021H10
13
Relationship Between Frequency and Minimum Latency
HB52F649E1-75B
Parameter
133
CE
latency
= 4
100
CE
latency
= 3
Frequency (MHz)
t
CK
(ns)
Active command to column command (same bank)
Symbol
PC100
Symbol 7.5
10
Notes
I
RCD
I
RC
3
2
1
Active command to active command (same bank)
9
7
= [I
RAS
+ I
RP
]
1
Active command to precharge command (same bank) I
RAS
Precharge command to active command (same bank) I
RP
Write recovery or data-in to precharge command
(same bank)
6
5
1
3
2
1
I
DPL
Tdpl
1
1
1
Active command to active command (different bank)
I
RRD
I
SREX
I
APW
2
2
1
Self refresh exit time
Tsrx
2
2
2
Last data in to active command
(Auto precharge, same bank)
Tdal
4
3
= [I
DPL
+ I
RP
]
Self refresh exit to command input
I
SEC
9
7
= [I
RC
]
3
Precharge command to high impedance
I
HZP
I
APR
Troh
4
3
Last data out to active command
(auto precharge) (same bank)
0
0
Last data out to precharge (early precharge)
I
EP
I
CCD
I
WCD
I
DID
I
DOD
I
CLE
I
RSA
I
CDD
I
PEC
3
2
Column command to column command
Tccd
1
1
Write command to data in latency
Tdwd
1
1
DQMB to data in
Tdqm
1
1
DQMB to data out
Tdqz
3
3
CKE to CK disable
Tcke
2
2
Register set to active command
S
to command disable
Tmrd
1
1
0
0
Power down exit to command input
Notes: 1. I
RCD
to I
RRD
are recommended value.
2. Be valid [DESL] or [NOP] at next command of self refresh exit.
3. Except [DESL] and [NOP]
1
1
相關(guān)PDF資料
PDF描述
HB52F649E1 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
HB52F88EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F168EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F169EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F89EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52F649EN-75B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus PC133 SDRAM
HB52R1289E22 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-B6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E2-A6A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module