- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370426 > HAT2026R (Hitachi,Ltd.) Silicon N Channel Power MOS FET High Speed Power Switching PDF資料下載
參數(shù)資料
| 型號(hào)： | HAT2026R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道功率MOS FET的高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | HAT2026R |
HAT2026R
5
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
0.2
0.5
1
2
5
10
20
500
200
100
20
50
10
5
di/dt = 20 A/μs
V = 0, Ta = 25°C
0
4
8
12
16
20
50
40
30
20
10
0
20
16
12
8
4
20
40
60
80
100
0
V
GS
V
DS
I = 11 A
V = 5 V
10 V
20 V
V = 20 V
10 V
5 V
1000
200
500
100
20
50
10
0.2
0.5
1
2
5
10
20
10000
2000
5000
1000
200
500
100
Ciss
Coss
Crss
V = 0
f = 1 MHz
V = 4 V, V = 10 V
PW = 3 μs, duty < 1 %
tf
r
d(off)
t
d(on)
t
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAT2027R | Silicon N Channel Power MOS FET High Speed Power Switchin |
| HAT2028RJ | Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2028R | Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2029R | Silicon N Channel Power MOS FET(N溝道功率MOSFET) |
| HAT2029 | Silicon N Channel Power MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2026R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2027R | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Power MOS FET High Speed Power Switchin |
| HAT2027R-EL | 制造商:Renesas Electronics Corporation 功能描述:HAT2027R-EL - Tape and Reel |
| HAT2027R-EL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAT2028R | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 60V 4A 8SOP - Tape and Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。