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參數(shù)資料
| 型號(hào)： | HAT2026R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道功率MOS FET的高速電源開關(guān) |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | HAT2026R |
HAT2026R
4
Gate to Source Voltage V (V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
Case Temperature Tc (°C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
0.05
Pulse Test
F
Drain Current I (A)
Forward Transfer Admittance vs.
Drain Current
0.20
0.16
0.12
0.08
0.04
0
2
4
6
8
10
I = 10 A
5 A
0.5
1
2
5
10
20
0.1
0.02
0.05
0.01
0.005
0.04
0.03
0.02
0.01
–40
0
40
80
120
160
0
I = 10 A
D
10
2
5
1
0.5
1
2
5
10
20
Pulse Test
2 A
5
0.002
V = 2.5 V
4 V
V = 2.5 V
4 V
2 A, 5 A, 10 A
2 A, 5 A
100
20
50
50
25 °C
Tc = –25 °C
75 °C
V = 10 V
Pulse Test
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PDF描述 |
|---|---|
| HAT2027R | Silicon N Channel Power MOS FET High Speed Power Switchin |
| HAT2028RJ | Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2028R | Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2029R | Silicon N Channel Power MOS FET(N溝道功率MOSFET) |
| HAT2029 | Silicon N Channel Power MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2026R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2027R | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Power MOS FET High Speed Power Switchin |
| HAT2027R-EL | 制造商:Renesas Electronics Corporation 功能描述:HAT2027R-EL - Tape and Reel |
| HAT2027R-EL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAT2028R | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 60V 4A 8SOP - Tape and Reel |
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