參數(shù)資料
型號(hào): HAT2026R
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET High Speed Power Switching
中文描述: 硅?通道功率MOS FET的高速電源開關(guān)
文件頁數(shù): 3/9頁
文件大?。?/td> 51K
代理商: HAT2026R
HAT2026R
3
Main Characteristics
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
D
D
Typical Transfer Characteristics
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
4.0
3.0
2.0
1.0
0
50
100
150
200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
10 μs
100 μs
50
40
30
20
10
0
2
4
6
8
10
10V
5 V
4 V
3 V
2.5 V
50
40
30
20
10
0
1
2
3
4
5
Tc = –25°C
25°C
75°C
Pulse Test
V = 10 V
Pulse Test
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Ta = 25 °C
1 shot Pulse
PW=10ms
Operation in
this area is
limited by R
DS(on)
Noe4
DCOpeaion(PW<10s
2 V
V = 1.5 V
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