參數(shù)資料
型號: HAL115
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
英文描述: Hall Effect Sensor IC
中文描述: 霍爾效應傳感器IC
文件頁數(shù): 7/9頁
文件大?。?/td> 110K
代理商: HAL115
HAL115
MICRONAS INTERMETALL
7
0
–50
2
4
6
8
10
12
14
0
50
100
150
°
C
mA
T
A
I
DD
Typical supply current
versus ambient temperature
V
DD
= 24 V
V
DD
= 4.5 V
HAL115
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30 V
mA
V
DD
I
DD
Typical supply current
versus supply voltage
T
A
= 0
°
C
HAL115
T
A
= 25
°
C
T
A
= 100
°
C
see note 2
Application Note
Because of inherent reverse voltage protection, no
diode is needed at pin 1 for reverse voltages ranging
from 0 V to –15 V.
For electromagnetic immunity, it is recommended to ap-
ply a 330 pF minimum capacitor between V
DD
(pin 1)
and Ground (pin 2).
For applications requiring robustness to conducted dis-
turbances (transients), a 220
series resistor to pin 1
and a 4.7 nF capacitor between V
DD
(pin 1) and Ground
(pin 2) is recommended.
Because of the I
DD
peak at 4.1 V, the series resistor
should not be greater than 270
.
The series resistor and the capacitor should be placed
as close as possible to the IC.
Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T
J
) is higher
than the temperature outside the package (ambient tem-
perature T
A
).
T
J
= T
A
+
T
At static conditions, the following equations are valid:
– for SOT-89A:
T = I
DD
* V
DD
* R
thJSB
– for TO-92UA:
T = I
DD
* V
DD
* R
thJA
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for I
DD
and
R
th
, and the max. value for V
DD
from the application.
Recommended Application Circuit for DC Fans
HAL115
1
2
3
3.3 k
R
1
L
1
R
2
3.3 k
L
2
C
1
C
2
2.2
μ
/50 V
2.2
μ
/50 V
V
DD
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