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參數(shù)資料
| 型號(hào)： | HAL115 |
| 廠商： | MICRONAS SEMICONDUCTOR HOLDING AG |
| 英文描述： | Hall Effect Sensor IC |
| 中文描述： | 霍爾效應(yīng)傳感器IC |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | HAL115 |
HAL115
MICRONAS INTERMETALL
5
Electrical Characteristics,
continued
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
t
en(O)
Enable Time of Output after
Setting of V
DD
3
–
6
50
μ
s
V
DD
= 12 V
t
r
Output Rise Time
3
–
85
400
ns
V
DD
= 12 V, RL = 820 Ohm,
CL = 20 pF
t
f
Output Fall Time
3
–
60
400
ns
V
DD
= 12 V, RL = 820 Ohm,
CL = 20 pF
R
thJSB
case
SOT-89A
Thermal Resistance Junction to
Substrate Backside
–
150
200
K/W
Fiberglass Substrate,
30 mm x 10 mm x 1,5mm
pad size see Fig. 6
R
thJA
case
TO-92UA
Thermal Resistance
Junction to Soldering Point
–
150
200
K/W
Leads at ambient tempera-
ture at a distance of 2 mm
from case
Magnetic Characteristics
at T
J
= –40
°
C to +100
°
C, V
DD
= 4.3 V to 24 V,
Typical Characteristics for T
J
= 25
°
C and V
DD
= 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
Min.
Typ.
Max.
Unit
On point B
ON
–10.7
1.2
12.5
mT
Off point B
OFF
–12.5
–1.2
10.7
mT
Hysteresis B
HYS
1.8
2.4
7
mT
B
OFF
min
B
ON
max
B
HYS
Output Voltage
Fig. 5:
Definition of magnetic switching points and
hysteresis
0
Fig. 6:
Recommended pad size SOT-89A
Dimensions in mm
5.0
2.0
2.0
1.0
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相關(guān)代理商/技術(shù)參數(shù) |
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| HAL115S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Industrial Control IC |
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| HAL115SF-C | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Hall Effect Sensor Family |
| HAL115SF-E | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Hall Effect Sensor Family |
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