參數(shù)資料
型號: HAL115
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
英文描述: Hall Effect Sensor IC
中文描述: 霍爾效應(yīng)傳感器IC
文件頁數(shù): 2/9頁
文件大小: 110K
代理商: HAL115
HAL115
MICRONAS INTERMETALL
2
Hall Effect Sensor IC
in CMOS technology
Features:
– operates from 4.3 to 24 V supply voltage with reverse
voltage protection
– operates with magnetic fields from DC to 20 kHz
– overvoltage and reverse-voltage protection
– on-chip temperature compensation circuitry mini-
mizes shifts in on and off points and hysteresis over
temperature and supply voltage
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of hystere-
sis
– ideal sensor for speed measurement, revolution
counting, positioning, and DC brushless motors
– short-circuit protection
Specifications
– switching type: bipolar
– output turns low with magnetic south pole on branded
side of package
– output can change, if magnetic pole is removed
Marking Code
Type
Temperature Range
E
C
HAL 115UA
115E
115C
HAL 115S
115E
115C
Operating Junction Temperature Range
E:
T
J
= –40
°
C to +100
°
C
C:
T
J
= 0
°
C to +100
°
C
Designation of Hall Sensors
Type: 115
HALXXXPP-T
Temperature Range: E or C
Package:UA for TO-92UA,
S for SOT-89A
Type: 115
Package: TO-92UA
Temperature Range: T
J
= –40
°
C to +100
°
C
Example:
HAL115UA-E
Solderability
– Package SOT-89A: according to IEC68-2-58
– Package TO-92UA: according to IEC68-2-20
OUT
GND
3
2
1V
DD
Fig. 1:
Pin configuration
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