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參數(shù)資料
| 型號(hào)： | H2N7000 |
| 廠商： | HSMC CORP. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
| 中文描述： | N溝道增強(qiáng)型晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 41K |
| 代理商： | H2N7000 |
HI-SINCERITY
MICROELECTRONICS CORP.
H2N7000
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 1/4
H2N7000
HSMC Product Specification
Description
The H2N7000 is designed for high voltage, high speed applications
such as switching regulators, converters, solenoid and relay drivers.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 400 mW
Maximum Voltages and Currents (Ta=25
°
C)
BVDSS Drain to Source Voltage......................................................................................... 60 V
BVGSS Gate to Source Voltage ......................................................................................... 40 V
ID Drain Current............................................................................................................. 200 mA
Characteristics
(Ta=25
°
C)
Symbol
VDSS
IDSS
±
IGSS
VGS(th)
ID(on)
RDS(on)
VDSS(on)1
VDSS(on)2
Min.
60
-
-
0.8
75
-
-
-
Max.
-
1
±
10
3
-
5
2.5
0.4
Unit
V
uA
nA
V
mA
V
v
Test Conditions
ID=10uA, VGS=0
VDS=48V
VGS=
±
15V
VDS=3V, ID=1mA
VGS=4.5V, VDS=10V
VGS=10V, ID=0.5A
VGS=10V, ID=0.5A
VGS=4.5V, ID=75mA
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