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參數(shù)資料
| 型號(hào)： | GW30NC60VD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT |
| 中文描述： | N溝道40A條- 600V的-對(duì)247非?？焖買(mǎi)GBT的開(kāi)關(guān)PowerMESH商標(biāo) |
| 文件頁(yè)數(shù)： | 5/13頁(yè) |
| 文件大小： | 397K |
| 代理商： | GW30NC60VD |
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STGW30NC60VD
Electrical characteristics
5/13
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
onf
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
=390 V, I
C
= 20A,
R
G
=3.3
,
V
GE
=15V
Tj=25°C
(see Figure 16)
31
11
1600
ns
ns
A/μs
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
=390 V, I
C
= 20A,
R
G
=3.3
,
V
GE
=15V
Tj=125°C
(see Figure 16)
31
11.5
1500
ns
ns
A/μs
t
r(Voff)
t
d(off)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
=390 V, I
C
= 20A,
R
G
=3.3
,
V
GE
=15V
Tj=25°C
(see Figure 16)
28
100
75
ns
ns
ns
t
r(Voff)
t
d(off)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
=390 V, I
C
= 20A,
R
G
=3.3
,
V
GE
=15V
Tj=125°C
(see Figure 16)
66
150
130
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
E
on (1)
E
off
E
ts
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in
Figure 18
. Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
=390 V, I
C
= 20A,
R
G
=3.3
,
V
GE
=15V,
Tj= 25°C
(see Figure 18)
220
330
550
300
450
750
μJ
μJ
μJ
E
on (1)
E
off
E
ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
=390 V, I
C
= 20A,
R
G
=3.3
,
V
GE
=15V,
Tj= 125°C
(see Figure 18)
450
770
1220
μJ
μJ
μJ
Table 7.
Collector-emitter diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
V
f
Forward on-voltage
If = 10A
If = 10A, Tj = 125°C
1.3
1
2.0
V
V
t
rr
Q
rr
I
rrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
If = 20A, V
R
= 40V,
T
j
= 25°C, di/dt =100A/μs
(see Figure 19)
44
66
3
ns
nC
A
t
rr
Q
rr
I
rrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
If = 20A, V
R
= 40V,
T
j
= 125°C,
di/dt =100A/μs
(see Figure 19)
88
237
5.4
ns
nC
A
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