參數(shù)資料
型號(hào): GW30NC60VD
廠(chǎng)商: 意法半導(dǎo)體
英文描述: N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT
中文描述: N溝道40A條- 600V的-對(duì)247非??焖買(mǎi)GBT的開(kāi)關(guān)PowerMESH商標(biāo)
文件頁(yè)數(shù): 3/13頁(yè)
文件大?。?/td> 397K
代理商: GW30NC60VD
STGW30NC60VD
Electrical ratings
3/13
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
Collector-emitter voltage (V
GS
= 0)
600
V
I
C(1)
1.
Calculated according to the iterative formula:
Collector current (continuous) at 25°C
80
A
I
C (1)
Collector current (continuous) at 100°C
40
A
I
CM (2)
2.
Pulse width limited by max junction temperature
Collector current (pulsed)
100
A
I
CL
Turn-off soa minimum current
100
A
V
GE
Gate-emitter voltage
± 20
V
I
F
Diode RMS forward current at Tc=25°C
30
A
P
TOT
Total dissipation at T
C
= 25°C
250
W
T
j
Operating junction temperature
– 55 to 150
°C
T
stg
Storage temperature
Table 2.
Thermal resistance
Symbol
Parameter
Min.
Typ.
Max.
Unit
Rthj-case
Thermal resistance junction-case IGBT
0.48
°C/W
Thermal resistance junction-case diode
1.5
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
°C/W
ICTC
)
C
)
)
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