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參數(shù)資料
| 型號： | GW30NC60VD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT |
| 中文描述： | N溝道40A條- 600V的-對247非?？焖買GBT的開關(guān)PowerMESH商標 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 397K |
| 代理商： | GW30NC60VD |
Electrical characteristics
STGW30NC60VD
4/13
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V
BR(CES)
Collector-emitter breakdown
voltage
I
C
= 1mA, V
GE
= 0
600
V
V
CE(SAT)
Collector-emitter saturation
voltage
V
GE
=15V, I
C
=20A,Tj=25°C
V
GE
=15V, I
C
=20A,Tj=125°C
1.8
1.7
2.5
V
V
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 250μA
3.75
5.75
V
I
CES
Collector-emitter leakage
current (V
GE
= 0)
V
CE
= Max rating,Tc=25°C
V
CE
= Max rating, Tc=125°C
250
1
μA
mA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ± 20V, V
CE
= 0
±100
nA
g
fs
Forward transconductance
V
CE
= 15V
,
I
C
= 20A
15
S
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
C
ies
C
oes
C
res
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
2200
225
50
pF
pF
pF
Q
g
Q
ge
Q
gc
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 390V, I
C
= 20A,
V
GE
= 15V,
(see Figure 17)
100
16
45
140
nC
nC
nC
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