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參數(shù)資料
| 型號(hào)： | GS882V37BB |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
| 中文描述： | 256K × 36 9Mb以上SCD的/雙氰胺同步突發(fā)靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 11/27頁(yè) |
| 文件大?。?/td> | 727K |
| 代理商： | GS882V37BB |
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Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 3.6
V
–
0.5 to 3.6
V
Voltage on Clock Input Pin
–
0.5 to 3.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
3.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
3.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
GS882V37BB/D-360/333/300
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 3/2005
11/27
2003, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
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