參數(shù)資料
型號(hào): GS88218BB-250V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 5.5 ns, PBGA119
封裝: FPBGA-119
文件頁數(shù): 32/35頁
文件大?。?/td> 863K
代理商: GS88218BB-250V
GS88218/36B(B/D)-xxxV
Rev: 1.03 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
32/35
2002, GSI Technology
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
T
A3
Status
4
512K x 18
GS88218BB-250V
SCD/DCD
1.8 V or 2.5 V
119 BGA (var. 2)
250/5.5
C
MP
512K x 18
GS88218BB-200V
SCD/DCD
1.8 V or 2.5 V
119 BGA (var. 2)
200/6.5
C
MP
512K x 18
GS88218BB-150V
SCD/DCD
1.8 V or 2.5 V
119 BGA (var. 2)
150/7.5
C
MP
256K x 36
GS88236BB-250V
SCD/DCD
1.8 V or 2.5 V
119 BGA (var. 2)
250/5.5
C
MP
256K x 36
GS88236BB-200V
SCD/DCD
1.8 V or 2.5 V
119 BGA (var. 2)
200/6.5
C
MP
256K x 36
GS88236BB-150V
SCD/DCD
1.8 V or 2.5 V
119 BGA (var. 2)
150/7.5
C
MP
512K x 18
GS88218BB-250IV
SCD/DCD
1.8 V or 2.5 V
119 BGA (var. 2)
250/5.5
I
MP
512K x 18
GS88218BB-200IV
SCD/DCD
1.8 V or 2.5 V
119 BGA (var. 2)
200/6.5
I
MP
512K x 18
GS88218BB-150IV
SCD/DCD
1.8 V or 2.5 V
119 BGA (var. 2)
150/7.5
I
MP
256K x 36
GS88236BB-250IV
SCD/DCD
1.8 V or 2.5 V
119 BGA (var. 2)
250/5.5
I
MP
256K x 36
GS88236BB-200IV
SCD/DCD
1.8 V or 2.5 V
119 BGA (var. 2)
200/6.5
I
MP
256K x 36
GS88236BB-150IV
SCD/DCD
1.8 V or 2.5 V
119 BGA (var. 2)
150/7.5
I
MP
512K x 18
GS88218BGB-250V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
250/5.5
C
PQ
512K x 18
GS88218BGB-200V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
200/6.5
C
PQ
512K x 18
GS88218BGB-150V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
150/7.5
C
PQ
256K x 36
GS88236BGB-250V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
250/5.5
C
PQ
256K x 36
GS88236BGB-200V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
200/6.5
C
PQ
256K x 36
GS88236BGB-150V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
150/7.5
C
PQ
512K x 18
GS88218BGB-250IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
250/5.5
I
PQ
512K x 18
GS88218BGB-200IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
200/6.5
I
PQ
512K x 18
GS88218BGB-150IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
150/7.5
I
PQ
256K x 36
GS88236BGB-250IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
250/5.5
I
PQ
256K x 36
GS88236BGB-200IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
200/6.5
I
PQ
Notes:
1.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example:
GS88236BB-150IVT.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through
mode. Each device is Pipeline/Flow Through mode-selectable by the user.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
MP = Mass Production. PQ = Pre-Qualification.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some
of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of cur-
rent offerings
2.
3.
4.
5.
相關(guān)PDF資料
PDF描述
GS88218BB-V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BGB-150IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-300 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-333 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
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