參數(shù)資料
型號: GS88218BB-250V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 5.5 ns, PBGA119
封裝: FPBGA-119
文件頁數(shù): 18/35頁
文件大?。?/td> 863K
代理商: GS88218BB-250V
GS88218/36B(B/D)-xxxV
Rev: 1.03 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
18/35
2002, GSI Technology
Pipeline Mode Timing (SCD)
Begin
Read A
Cont
Cont
Deselect Write B
Read C
Read C+1 Read C+2 Read C+3 Cont
Deselect
tHZ
tKQX
tKQ
tLZ
tH
tS
tOHZ
Q(A)
tOE
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tS
tH
tS
tH
tS
tH
tS
Burst Read
tKL
tKC
tKH
Single Write
Single Read
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
A
B
C
Deselected with E1
E1 masks ADSP
E2 and E3 only sampled with ADSP and ADSC
ADSC initiated read
CK
ADSP
ADSC
ADV
A0–An
GW
BW
Ba–Bd
E1
E2
E3
G
DQa–DQd
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