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參數(shù)資料
| 型號： | GS881E18T-100 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| 中文描述： | 512K X 18 CACHE SRAM, 12 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 23/34頁 |
| 文件大?。?/td> | 487K |
| 代理商： | GS881E18T-100 |
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Rev: 1.10 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
23/34
2000, Giga Semconductor, Inc.
Preliminary
GS881E18/36T-11/11.5/100/80/66
Sleep Mode Timing Diagram
Application Tips
Single and Dual Cycle Deselect
SCD devices force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with the output
drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually assures there
will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on
dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address
boundary crossings) but greater care must be exercised to avoid excessive bus contention.
JTAG Port Operation
Overview
The JTAG Port on this RAM operates in a manner consistent with IEEE Standard 1149.1-1990, a serial boundary scan interface
standard (commonly referred to as JTAG), but does not implement all of the functions required for 1149.1 compliance. Some
functions have been modified or eliminated because they can slow the RAM. Nevertheless, the RAM supports 1149.1-1990 TAP
(Test Access Port) Controller architecture, and can be expected to function in a manner that does not conflict with the operation of
Standard 1149.1 compliant devices. The JTAG Port interfaces with conventional TTL / CMOS logic level signaling.
Disabling the JTAG Port
It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless
clocked. TCK, TDI, and TMS are designed with internal pull-up circuits. To assure normal operation of the RAM with the JTAG
Port unused, TCK, TDI, and TMS may be left floating or tied to either V
DD
or V
SS
. TDO should be left unconnected.
CK
ADSP
ADSC
tH
tKH tKL
tKC
tS
ZZ
tZZR
tZZH
tZZS
~
~
~
~
Snooze
相關PDF資料 |
PDF描述 |
|---|---|
| GS881E18T-100I | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E18T-11 | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E18T-11.5 | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E18T-11.5I | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E18T-11I | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS881E18T-100I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E18T-11 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E18T-11.5 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E18T-11.5I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E18T-11I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
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