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參數(shù)資料
| 型號： | GS8330DW36C-250 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1.2V-vf 200ns 5uA-ir DO-41 5K/AMMO |
| 中文描述： | 雙晚寫SigmaRAM |
| 文件頁數(shù)： | 7/30頁 |
| 文件大小： | 583K |
| 代理商： | GS8330DW36C-250 |
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Rev: 1.00 6/2003
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
7/30
2003, GSI Technology, Inc.
Preliminary
GS8330DW36/72C-250/200
Two Byte Write Control Example with Double Late Write SigmaRAM
Special Functions
Burst Cycles
Although SRAMs can sustain 100% bus bandwidth by eliminating the bus turnaround cycle in Double Late Write mode, burst read
or burst write cycles may also be performed. SRAMs provide an on-chip burst address generator that can be utilized, if desired, to
simplify burst read or write implementations. The ADV control pin, when driven high, commands the SRAM to advance the
internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in
a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode.
DA
DB
DE
DA
DC
/BB
DQA0-DQA8
DQB0-DQB8
CQ
/E
1
ADV
/BA
D
C
Address
A
B
ADV
CK
Write
Write
F
E
Write
Non-Write
Write
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8330DW36C-250I | RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1.2V-vf 200ns 5uA-ir DO-41 1K/BULK |
| GS8330DW72 | 1 watt dc-dc converters |
| GS8330DW36 | 1 watt dc-dc converters |
| GS8330DW36-200 | 1 watt dc-dc converters |
| GS8330DW36-250 | 1 watt dc-dc converters |
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參數(shù)描述 |
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| GS8342D06BD-350 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS8342D06BD-500 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS8342D06BD-550 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS8342D06BD-550I | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS8342D08AE-167 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 4MX8 0.5NS 165FPBGA - Trays |
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